Gernot Fattinger received his M.S. degree and his PhD in Physics in 2000 and 2005, respectively, from the Johannes Kepler University, Linz, Austria. In 2003, he joined Infineon Technologies, Munich as a BAW R&D engineer, working most notably on understanding the fundamental device physics of BAW devices, coupled resonator filters, and high frequency filters. He joined TriQuint, Apopka, FL in 2006 as a BAW R&D engineer and is today responsible for BAW R&D and Global EDA at Qorvo. His current research interests are new materials, improving the understanding and modeling of BAW device physics, system simulation, and RF front-end module design.